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參數(shù)資料
| 型號： | MRF166C |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power FET(射頻功率場效應(yīng)管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 319-07, 6 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 219K |
| 代理商： | MRF166C |
1
MRF166C
The RF MOSFET Line
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30–500
MHz.
MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc
Output Power = 20 W
Gain = 13.5 dB
Efficiency = 50%
Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Facilitates Manual Gain Control, ALC and Modulation Techniques
Excellent Thermal Stability, Ideally Suited for Class A Operation
Low Crss — 4.0 pF @ VDS = 28 V
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
S–Parameters Available for Download into Frequency Domain Simulators.
See http://mot–sps.com/rf/designtds/
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDSS
VDGR
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M
)
65
Vdc
Gate–Source Voltage
VGS
ID
PD
±
20
Adc
Drain Current — Continuous
4.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate Above 25
°
C
70
0.4
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to 150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.5
°
C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF166C/D
SEMICONDUCTOR TECHNICAL DATA
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
CASE 319–07, STYLE 3
Motorola, Inc. 2000
D
G
S
REV 10
相關(guān)PDF資料 |
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|---|---|
| MRF166 | MOSFET BROADBAND RF POWER FETs |
| MRF171A | RF MOSFET(射頻MOS場效應(yīng)管) |
| MRF18060BS | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| MRF18090A | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| MRF18090AS | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF166W | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 8A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF171 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF171A | 功能描述:射頻MOSFET電源晶體管 100-200MHz 45Watts 28Volt Gain 17dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF171AMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF172 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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