參數(shù)資料
型號: MRF166C
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power FET(射頻功率場效應(yīng)管)
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 319-07, 6 PIN
文件頁數(shù): 2/12頁
文件大?。?/td> 219K
代理商: MRF166C
MRF166C
2
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 5.0 mA)
V(BR)DSS
65
V
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
0.5
mA
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
IGSS
1.0
μ
A
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
VGS(th)
1.5
3.0
4.5
V
Forward Transconductance
(VDS = 10 V, ID = 1.5 A)
gfs
0.8
1.1
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Ciss
28
pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Coss
30
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Crss
4.0
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA)
Gps
13.5
16
dB
Drain Efficiency
(VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA)
η
50
55
%
Electrical Ruggedness
(VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA,
Load VSWR 30:1 at All Phase Angles)
ψ
No Degradation in Output Power
相關(guān)PDF資料
PDF描述
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