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參數(shù)資料
| 型號： | MRF18030BLR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 357K |
| 代理商： | MRF18030BLR3 |
2
RF Device Data
Freescale Semiconductor
MRF18030BLR3 MRF18030BLSR3
Table 4. Electrical Characteristics
(T
C
= 25
°
C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
I
GSS
—
—
1
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μ
Adc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 250 mAdc)
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1 Adc)
V
GS(th)
2
3
4
Vdc
V
GS(Q)
2
3.9
4.5
Vdc
V
DS(on)
—
0.29
0.4
Vdc
g
fs
—
2
—
S
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Functional Tests
(In Freescale Test Fixture)
(2)
Output Power, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1930 - 1990 MHz)
Common-Source Amplifier Power Gain @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1930 - 1990 MHz)
C
rss
—
1.3
—
pF
P1dB
27
30
—
W
G
ps
13
14
—
dB
η
46.5
50
—
%
Input Return Loss @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1930 - 1990 MHz)
1. Part internally matched both on input and output.
2. Device specifications obtained on a Production Test Fixture.
IRL
—
-12
-9
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18030BLSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF18030BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF18030BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF1803BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF1803BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
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