| 型號 | 廠商 | 描述 |
| mrf18030blr3 2 3 4 5 6 7 8 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf18090br3 2 3 4 5 6 7 8 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf21120r6 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistor |
| mrf377hr3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
飛思卡爾半導(dǎo)體(中國)有限公司 | N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf377 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Motorola, Inc. | RF POWER FIELD EFFECT TRANSISTOR |
| mrf377r5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Motorola, Inc. | Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount with flange, 10 Vdc excitation |
| mrf377r3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Motorola, Inc. | Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount, 10 Vdc excitation |
| mrf377hr5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
飛思卡爾半導(dǎo)體(中國)有限公司 | N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf421 2 3 4 |
TRI GASKET FLG 24 BULK/100 | |
| mrf421 2 3 4 |
MOTOROLA INC | RF POWER TRANSISTORS NPN SILICON |
| mrf422 2 3 4 |
The RF Line NPN Silicon RF Power Transistor | |
| mrf422 2 3 4 |
MOTOROLA INC | RF POWER TRANSISTORS NPN SILICON |
| mrf501 |
TERM - THINFILM | |
| 2n4251 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset | |
| 2n5139 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-92 | |
| 2n5221 |
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 500MA I(C) | TO-92 | |
| 2n5243 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-105 | |
| 2n5855 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset | |
| 2n5857 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset | |
| mrf502 |
TERM - THINFILM | |
| pn4258a |
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2n4972 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset | |
| 2n5382 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset | |
| 2n5041 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-222AB | |
| 2n4313 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset | |
| mrf5p20180hr6 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistor |
| mrf5p20180r6 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | RF POWER FIELD EFFECT TRANSISTOR |
| mrf5p20180 2 3 4 5 6 7 8 9 10 11 12 |
Motorola, Inc. | RF POWER FIELD EFFECT TRANSISTOR |
| mrf5p21045nr1 2 3 4 5 6 7 8 9 10 11 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| mrf5s19060mbr1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistors |
| mrf5s19090hr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf5s19130hr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | Suitable for TDMA, CDMA and multicarrier amplifier applications. |
| mrf5s19130sr3 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf5s19130r3 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf5s19130hsr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | Suitable for TDMA, CDMA and multicarrier amplifier applications. |
| mrf5s21045nr1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistors |
| mrf5s21045 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistors |
| mrf5s21090hr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| mrf5s21090hsr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | XTAL MTL T/H HC49/U |
| mrf5s21100hr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| mrf5s21100lr3 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf5s21100lsr3 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf5s21100hsr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| mrf5s21130hsr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| mrf5s21130hr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| mrf5s21150hr3 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf5s9080nr1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
飛思卡爾半導(dǎo)體(中國)有限公司 | RF Power Field Effect Transistors |
| mrf5s9100mr1 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | CAP 1500PF 100V 100V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 |
| mrf5s9100mbr1 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | N-Channel Enhancement-Mode Lateral MOSFETs |
| mrf5s9100nbr1 2 3 4 5 6 7 8 9 10 11 12 |
飛思卡爾半導(dǎo)體(中國)有限公司 | N-Channel Enhancement-Mode Lateral MOSFETs |