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參數(shù)資料
| 型號： | MRF19045LSR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400S, CASE 465F-04, 2 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 326K |
| 代理商： | MRF19045LSR3 |
1
MRF19045R3 MRF19045SR3
Motorola, Inc. 2002
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical CDMA Performance @ 1960 MHz, 26 Volts, I
DQ
= 550 mA
Multi–carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: –50 dBc @ 30 kHz BW
IM3 — –37 dBc
100% Tested Under 2–Carrier N–CDMA
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
–0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
105
0.60
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +200
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.65
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF19045/D
SEMICONDUCTOR TECHNICAL DATA
1990 MHz, 45 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–03, STYLE 1
NI–400
MRF19045R3
CASE 465F–03, STYLE 1
NI–400S
MRF19045SR3
REV 3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19045LSR5 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19045R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19045S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF19045SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19060 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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