參數(shù)資料
型號： MRF19085SR3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： CONN, 10-PIN HDR, SMT
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù)： 1/12頁
文件大小： 584K
代理商： MRF19085SR3
1
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
For More Information On This Product,
Go to: www.freescale.com
Motorola, Inc. 2004
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2-Carrier N-CDMA Performance for V
DD
= 26 Volts,
I
DQ
= 850 mA, P
out
= 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — -51 dB
IM3 — -36.5 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
273
1.56
Watts
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.79
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF19085/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF19085R3
MRF19085LR3
MRF19085SR3
MRF19085LSR3
1990 MHz, 90 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF19085R3,MRF19085LR3
CASE 465A-06, STYLE 1
NI-780S
MRF19085SR3, MRF19085LSR3
REV 6
F
Freescale Semiconductor, Inc.
n
.
相關(guān)PDF資料
PDF描述
MRF19090S RF MOSFET(射頻MOS場效應(yīng)管)
MRF19125 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125S RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125SR3 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF1946 RF POWER TRANSISTORS NPN SILICON
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF19090 制造商:Motorola Inc 功能描述:
MRF19090R3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF19090S 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B
MRF19090SR3 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF19120 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*