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參數(shù)資料
| 型號： | MRF19090S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場效應管) |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880S, CASE 465C-02, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 157K |
| 代理商： | MRF19090S |
1
MRF19090 MRF19090S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1999
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for class AB PCN and PCS base station applications from 1.9 to
2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier
applications.
Typical CDMA Performance: 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9 Watts
Power Gain — 10 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
Vdc
Total Device Dissipation @ TC > = 25
°
C
Derate above 25
°
C
270
1.54
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.65
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF19090/D
SEMICONDUCTOR TECHNICAL DATA
90 W, 1990 MHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465B–02, STYLE 1
(MRF19090)
CASE 465C–01, STYLE 1
(MRF19090S)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19090SR3 | 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19120 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19120S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19125 | 制造商:Freescale Semiconductor 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391 |
| MRF19125R3 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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