參數(shù)資料
型號: MRF19125S
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-880S, CASE 465C-02, 3 PIN
文件頁數(shù): 2/12頁
文件大小: 362K
代理商: MRF19125S
MRF19125 MRF19125S MRF19125SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
Adc)
V
(BR)DSS
65
Vdc
Gate
Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
1
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
10
μ
Adc
ON CHARACTERISTICS
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
9
S
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
V
GS(th)
2
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 1300 mAdc)
V
GS(Q)
2.5
3.9
4.5
Vdc
Drain
Source On
Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
0.185
0.21
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
5.4
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture) 2
Carrier N
CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common
Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
G
ps
12
13.5
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
19
22
%
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1
2.5 MHz and f2 +2.5 MHz)
IMD
37
35
dBc
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1
885 MHz and f2 +885 MHz)
ACPR
51
47
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
13
9
dB
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 125 W CW, I
DQ
= 1300 mA, f = 1930 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
相關PDF資料
PDF描述
MRF19125SR3 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF1946 RF POWER TRANSISTORS NPN SILICON
MRF1946A RF POWER TRANSISTORS NPN SILICON
MRF20030 RF POWER TRANSISTOR
MRF20060R NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
MRF19125SR3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1946 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF1946A 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF1A(AMMO) 制造商:Bel Fuse 功能描述:FUSE
MRF1K50GNR5 功能描述:WIDEBAND RF POWER LDMOS TRANSIST 制造商:nxp usa inc. 系列:- 包裝:剪切帶(CT) 零件狀態(tài):在售 晶體管類型:LDMOS 頻率:1.8MHz ~ 500MHz 增益:23dB 電壓 - 測試:50V 額定電流:- 噪聲系數(shù):- 功率 - 輸出:1500W 電壓 - 額定:50V 封裝/外殼:OM-1230G-4L 供應商器件封裝:OM-1230G-4L 標準包裝:1