- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378675 > MRF21085SR3 (MOTOROLA INC) RF Power Field Effect Transistors PDF資料下載
參數(shù)資料
| 型號： | MRF21085SR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 562K |
| 代理商： | MRF21085SR3 |
MRF21085R3 MRF21085SR3 MRF21085LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μ
Adc)
V
GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1000 mAdc)
V
GS(Q)
3
3.9
5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.18
0.21
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
6
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
3.6
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
G
ps
12
13.6
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
20
23
—
%
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3
—
-37.5
-35
dBc
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.)
ACPR
—
-41
-38
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
-12
-9
dB
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 90 W CW, I
DQ
= 1000 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(continued)
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF21180 | RF Power Field Effect Transistor |
| MRF21180R6 | RF Power Field Effect Transistor |
| MRF224 | 40W, 175MHz RF POWER TRANSISTOR NPN SILICON |
| MRF240 | RF POWER TRANSISTORS NPN SILICON |
| MRF247 | RF POWER TRANSISTOR NPN SILICON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21090 | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, RFMOD |
| MRF21090R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21090R3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21090SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21120 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。