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參數(shù)資料
| 型號： | MRF240 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTORS NPN SILICON |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 129K |
| 代理商： | MRF240 |
1
MRF240
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 13.6 volt VHF large–signal class C and class AB linear power
amplifier applications in commercial and industrial equipment.
High Common Emitter Power Gain
Specified 13.6 V, 160 MHz Performance:
Output Power = 40 Watts
Power Gain = 9.0 dB Min
Efficiency = 55% Min
Load Mismatch Capability at Rated Voltage and RF Drive
Silicon Nitride Passivated
Low Intermodulation Distortion, d3 = –30 dB Typ
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
16
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
8.0
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
100
0.57
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
1.75
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Symbol
Min
Typ
Max
Unit
V(BR)CEO
16
—
—
Vdc
V(BR)CES
36
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
ICBO
—
—
10
mAdc
hFE
10
70
150
—
Cob
—
90
125
pF
NOTES:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
(continued)
Order this document
by MRF240/D
SEMICONDUCTOR TECHNICAL DATA
40 W, 145–175 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 145A–09, STYLE 1
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