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參數(shù)資料
| 型號： | MRF282 |
| 廠商： | Motorola, Inc. |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | 橫向N溝道寬帶RF功率MOSFET |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 142K |
| 代理商： | MRF282 |
MRF282S MRF282Z
4
MOTOROLA RF DEVICE DATA
RF
INPUT
Z10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
VGG
(BIAS)
VDD
C1
C6
C2
C3
L4
L1
C9
R1
B1
C4
R2
B2
C7
R3
B3
C17
C15
Z8
C12
DUT
+
C5
C8
L2
L3
L5
Z11
C16
R6
B6
C13
R5
B4
C10
R4
B5
+
C11
C14
+
–
+
–
Figure 2. Schematic of 1.81 – 1.88 GHz Broadband Test Circuit
B1, B2, B3,
B4, B5, B6
C1, C16
C2, C9, C12
C3
C4, C13
C5, C14
C6, C8, C11, C15
C7, C10
C17
L1
Ferrite Bead, Fair Rite, (2743021446)
470
μ
F, 63 V, Electrolytic Capacitor, Mallory
0.6–4.5 pF, Variable Capacitor, Johanson Gigatrim
0.8–4.5 pF, Variable Capacitor, Johanson Gigatrim
0.1
μ
F, Chip Capacitor
100 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
1000 pF, B Case Chip Capacitor, ATC
0.1 pF, B Case Chip Capacitor, ATC
3 Turns, 27 AWG, 0.087
″
OD, 0.050
″
ID,
0.053
″
Long, 6.0 nH
5 Turns, 27 AWG, 0.087
″
OD, 0.050
″
ID,
0.091
″
Long, 15 nH
9 Turns, 26 AWG, 0.080
″
OD, 0.046
″
ID,
0.170
″
Long, 30.8 nH
4 Turns, 27 AWG, 0.087
″
OD, 0.050
″
ID,
0.078
″
Long, 10 nH
L2
L3, L4
L5
R1, R2, R3,
R4, R5, R6
W1, W2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Board
12
, 1/8 W Fixed Film Chip Resistor,
0.08
″
x 0.13
″
Berrylium Copper, 0.010
″
x 0.110
″
x 0.210
″
0.122
″
x 0.08
″
Microstrip
0.650
″
x 0.08
″
Microstrip
0.160
″
x 0.08
″
Microstrip
0.030
″
x 0.08
″
Microstrip
0.045
″
x 0.08
″
Microstrip
0.291
″
x 0.08
″
Microstrip
0.483
″
x 0.330
″
Microstrip
0.414
″
x 0.330
″
Microstrip
0.392
″
x 0.08
″
Microstrip
0.070
″
x 0.08
″
Microstrip
1.110
″
x 0.08
″
Microstrip
1 = 0.03 Glass Teflon
, Arlon GX–0300–55–22,
2 oz Copper, 3 x 5
″
Dimenson, 0.030
″
,
ε
r = 2.55
DC
SUPPLY
RF
OUTPUT
相關(guān)PDF資料 |
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|---|---|
| MRF282S | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282Z | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF284 | RF Power Field-Effect Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF282S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF282Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射頻MOSFET電源晶體管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF284 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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