- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378675 > MRF313 (MOTOROLA INC) HIGH-FREQUENCY TRANSISTOR NPN SILICON PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF313 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | HIGH-FREQUENCY TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | MRF313 |
1
MRF313
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for wideband amplifier, driver or oscillator applications in military,
mobile, and aircraft radio.
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 1.0 Watt
Power Gain = 15 dB Min
Efficiency = 45% Typ
Emitter Ballast and Low Current Density for Improved MTBF
Common Emitter for Improved Stability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
3.0
Vdc
Collector Current — Continuous
150
mAdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
6.1
35
Watts
mW/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
28.5
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current (VCE = 20 Vdc, IB = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICEO
30
—
—
Vdc
35
—
—
Vdc
35
—
—
Vdc
3.0
—
—
Vdc
—
—
1.0
mAdc
(continued)
Order this document
by MRF313/D
SEMICONDUCTOR TECHNICAL DATA
1.0 W, 400 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 305A–01, STYLE 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF314 | RF POWER TRANSISTORS NPN SILICON |
| MRF392 | BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON |
| MRF393 | BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON |
| MRF426 | RF POWER TRANSISTOR NPN SILICON |
| MRF429 | RF POWER TRANSISTOR NPN SILICON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF314 | 功能描述:射頻雙極電源晶體管 30-200MHz 30Watts 28Volt Gain 10dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF314A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF315 | 制造商:Ferraz Shawmut 功能描述: |
| MRF315A | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF316 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 35V 9A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。