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參數(shù)資料
| 型號： | MRF282S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 142K |
| 代理商： | MRF282S |
MRF282S MRF282Z
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50
μ
Adc)
VGS(th)
2.0
3.0
4.0
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
—
0.4
0.6
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 0.5 Adc)
gfs
0.5
0.7
—
S
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 75 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
15
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
8.0
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
0.45
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
11
12.6
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
34
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
–32.5
–30
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
10
14
—
dB
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
11
12.6
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
—
30
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
–32.5
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
10
14
—
dB
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Gps
11
12.3
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
η
40
45
—
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1,
All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
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| MRF282Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
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