參數(shù)資料
型號(hào): MRF377HR3
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁數(shù): 3/16頁
文件大?。?/td> 780K
代理商: MRF377HR3
MRF377HR3 MRF377HR5
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
η
23.5
25.8
23.0
22.7
21.3
%
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ACPR
-59.3
-59.3
-58.7
-58.7
-58.1
dBc
Typical Characteristics
(In ATSC 8VSB Single-Channel, Broadband Fixture,
50 ohm system)
(1)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
G
ps
17.5
17.5
17.2
17.2
16.6
dB
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
η
31.0
34.3
30.1
29.6
27.8
%
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
IMD
31.7
32.7
32.9
34.2
35.4
dBc
1. Measured in push-pull configuration.
相關(guān)PDF資料
PDF描述
MRF377 RF POWER FIELD EFFECT TRANSISTOR
MRF377R5 Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount with flange, 10 Vdc excitation
MRF377R3 Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount, 10 Vdc excitation
MRF377HR5 N-Channel Enhancement-Mode Lateral MOSFETs
MRF421 TRI GASKET FLG 24 BULK/100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF377HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF377HR5 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF377R3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF377R5 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF3866 功能描述:射頻雙極小信號(hào)晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel