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參數(shù)資料
| 型號： | MRF422 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTORS NPN SILICON |
| 中文描述： | 20 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MRF422 |
The RF Line
Designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz.
Specified 28 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
Intermodulation Distortion @ 150 W (PEP) —
IMD = –30 dB (Min)
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
40
Vdc
Collector–Base Voltage
V
CBO
85
Vdc
Emitter–Base Voltage
V
EBO
3.0
Vdc
Collector Current — Continuous
I
C
20
Adc
Withstanding Current — 10 s
—
30
Adc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
290
1.66
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.6
°
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 200 mAdc, I
B
= 0)
V
(BR)CEO
35
—
—
Vdc
Collector–Emitter Breakdown Voltage (I
C
= 100 mAdc, V
BE
= 0)
V
(BR)CES
85
—
—
Vdc
Collector–Base Breakdown Voltage (I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
85
—
—
Vdc
Emitter–Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
3.0
—
—
Vdc
Collector Cutoff Current (V
CE
= 28 Vdc, V
BE
= 0, T
C
= 25
°
C)
I
CES
—
—
20
mAdc
(continued)
150 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–11, STYLE 1
Order this document
by MRF
422/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF422MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF426 | 功能描述:射頻雙極電源晶體管 1.5-30MHz 25Watts 28Volt Gain 22dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF426MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF427 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF428 | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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