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參數(shù)資料
| 型號： | MRF429 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | 16 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 141K |
| 代理商： | MRF429 |
1
MRF429
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
Designed primarily for high–voltage applications as a high–power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
Specified 50 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 13 dB
Efficiency = 45%
Intermodulation Distortion @ 150 W (PEP) —
IMD = –32 dB (Max)
Diffused Emitter Resistors for Superior Ruggedness
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
@ 150 W CW
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
—
50
Vdc
Collector–Base Voltage
100
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
16
Adc
Withstand Current — 10 s
20
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
233
1.33
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.75
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
50
—
—
Vdc
100
—
—
Vdc
100
—
—
Vdc
4.0
—
—
Vdc
(continued)
Order this document
by MRF429/D
SEMICONDUCTOR TECHNICAL DATA
150 W (LINEAR), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–11, STYLE 1
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