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參數(shù)資料
| 型號： | MRF5P21045NR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | 射頻功率場效應(yīng)晶體管N溝道增強型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 423K |
| 代理商： | MRF5P21045NR1 |
MRF5P21045NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. Dual path topology suitable for Doherty, quadrature, single-ended and
push-pull applications.
Typical 2-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 500 mA,
P
out
= 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output
Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
200
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 45
W CW
Case Temperature 77
°
C,
10
W CW
R
θ
JC
1.35
1.48
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5P21045N
Rev. 0, 4/2007
Freescale Semiconductor
Technical Data
MRF5P21045NR1
2110-2170 MHz, 10 W AVG., 28 V
2 x W-CDMA, DUAL PATH
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 1486-03, STYLE 1
TO-270 WB-4
(Top View)
RF
outA
/V
DSA
3
2
Figure 1. Pin Connections
4
1 RF
outB
/V
DSB
RF
inA
/V
GSA
RF
inB
/V
GSB
Note: Exposed backside of the package is
the source terminal for the transistors.
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5P21180 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5P21180HR6 | 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5P21180HR6_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180R6 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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