參數(shù)資料
型號： MRF5P21180
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF Power Field Effect Transistor
中文描述： 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-1230, CASE 375D-04, 4 PIN
文件頁數(shù)： 3/9頁
文件大小： 406K
代理商： MRF5P21180
3
MRF5P21180
MOTOROLA RF DEVICE DATA
Figure 1. MRF5P21180 Test Circuit Schematic
Z1, Z22
Z2, Z21
Z3, Z20
Z4, Z19
Z5, Z6
Z7, Z8
1.000
″
x 0.066
″
Microstrip
0.760
″
x 0.113
″
Microstrip
0.068
″
x 0.066
″
Microstrip
1.672
″
x 0.066
″
Microstrip
0.318
″
x 0.066
″
Microstrip
0.284
″
x 0.180
″
Microstrip
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
PCB
0.256
″
x 0.650
″
Microstrip
1.030
″
x 0.035
″
Microstrip
0.500
″
x 0.650
″
Microstrip
0.550
″
x 0.058
″
Microstrip
0.353
″
x 0.066
″
Microstrip
Taconic RF–35, 0.76 mm,
ε
r
= 3.5
Table 1. MRF5P21180 Test Circuit Component Designations and Values
Description
30 pF Chip Capacitors
5.6 pF Chip Capacitors
10
μ
F Tantalum Capacitors
1000 pF Chip Capacitors
0.1
μ
F Chip Capacitors
22
μ
F Tantalum Capacitors
Part
Value, P/N or DWG
Manufacturer
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10
C11, C12
C13, C14, C15, C16
C17, C18, C19, C20,
C21, C22
100B300JCA500X
100B5R6JCA500X
T495X106K035AS4394
100B102JCA500X
CDR33BX104AKWS
T491X226K035AS4394
ATC
ATC
Kemet
ATC
Kemet
Kemet
C23, C24
R1, R2, R3, R4
R5
WB1, WB2, WB3, WB4
1.0
μ
F Tantalum Capacitors
10 , 1/8 W Chip Resistors
1.0 k , 1/8 W Chip Resistor
Wear Blocks
T491C105M050
Kemet
5 x 180 x 500 mil Brass Shim
Motorola
相關PDF資料
PDF描述
MRF5P21240 RF POWER FIELD EFFECT TRANSISTOR
MRF5P21240R6 RF POWER FIELD EFFECT TRANSISTOR
MRF5S19100HD The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19100HR3 The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19100HSR3 The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
相關代理商/技術參數(shù)
參數(shù)描述
MRF5P21180HR5 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5P21180HR6 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5P21180HR6_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21180R6 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21240 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
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