參數資料
型號: MRF5P21180
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power Field Effect Transistor
中文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-1230, CASE 375D-04, 4 PIN
文件頁數: 7/9頁
文件大?。?/td> 406K
代理商: MRF5P21180
7
MRF5P21180
MOTOROLA RF DEVICE DATA
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Figure 12. Series Equivalent Input and Output Impedance
f
MHz
Z
source
Z
load
2110
2140
2170
5.39 – j13.89
5.53 – j14.51
5.66 – j13.99
3.69 – j10.51
3.81 – j10.66
3.79 – j11.05
Z
source
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
=
Test circuit impedance as measured
from drain to drain, balanced configuration.
-
"
%
- F
5"
/01
-
234
;01
61.<8;3
91>/7
928.9
;,97
91
0101
61.<8;3
91>/7
相關PDF資料
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相關代理商/技術參數
參數描述
MRF5P21180HR5 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5P21180HR6 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5P21180HR6_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21180R6 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21240 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR