參數(shù)資料
型號: MRF5S19090LSR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 420K
代理商: MRF5S19090LSR3
A
A
F
Freescale Semiconductor, Inc.
MRF5S19090LR3 MRF5S19090LSR3
MOTOROLA RF DEVICE DATA
5
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
η
6
1860
16
60
40
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
Gp
,
η
I
50
10
20
30
40
I
I
V
DD
= 28 Vdc, P
out
= 18 W (Avg.), I
DQ
= 850 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
14
30
12
20
10
20
8
40
1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
0
E
100
12
17
1
1100 mA
I
DQ
= 1300 mA
850 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
Gp
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
650 mA
450 mA
10
16
15
14
13
100
55
15
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
I
I
1100 mA
1300 mA
850 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
650 mA
I
DQ
= 450 mA
10
20
25
30
35
40
45
50
10
55
25
0.1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
I
I
V
DD
= 28 Vdc, P
out
= 90 W (PEP), I
DQ
= 850 mA
TwoTone Measurements, Center Frequency = 1960 MHz
30
35
40
45
50
1
5th Order
3rd Order
42
45
56
31
P3dB = 51.21 dBm (132.13 W)
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
Po
V
DD
= 28 Vdc, I
DQ
= 850 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
Center Frequency = 1960 MHz
41
P1dB = 50.82 dBm (120.78 W)
Ideal
Actual
55
54
53
52
51
50
49
48
47
46
32
33
34
35
36
37
38
39
40
相關(guān)PDF資料
PDF描述
MRF5S21130 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130R3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130S The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130SR3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150 RF POWER FIELD EFFECT TRANSISTORS
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