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參數(shù)資料
| 型號(hào)： | MRF5S19100HD |
| 廠(chǎng)商： | Motorola, Inc. |
| 英文描述： | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻MOSFET線(xiàn)的射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 726K |
| 代理商： | MRF5S19100HD |
3
MRF5S19100HR3 MRF5S19100HSR3
MOTOROLA RF DEVICE DATA
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.590
″
x 0.071
″
Microstrip
0.450
″
x 1.133
″
Microstrip
0.450
″
x 0.141
″
Microstrip
0.490
″
x 0.080
″
Microstrip
0.085
″
x 0.080
″
Microstrip
1.124
″
x 0.080
″
Microstrip
Arlon GX-0300-55-22, 0.030
″
,
ε
r
= 2.55
Figure 1. MRF5S19100HR3(HSR3) Test Circuit Schematic
Z1, Z3
Z2
Z4
Z5
Z6
Z7
Z8
0.140
″
x 0.080
″
Microstrip
0.450
″
x 0.080
″
Microstrip
0.525
″
x 0.080
″
Microstrip
0.636
″
x 0.141
″
Microstrip
0.650
″
x 0.050
″
Microstrip
0.320
″
x 1.299
″
Microstrip
0.091
″
x 1.133
″
Microstrip
C3
R2
V
BIAS
V
SUPPLY
C13
C9
C8
C15
C6
C7
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z9
Z11
Z12
Z13
+
DUT
C12
C11
R4
W1
C2
Z10
Z8
B1
R3
+
C4
C5
C16
Z7
+
+
C14
+
Z14
C17
C10
+
Table 1. MRF5S19100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Newark
ATC
ATC
Kemet
Kemet
ATC
ATC
ATC
Kemet
Kemet
Newark
ATC
ATC
Newark
Newark
Garrett Electronics
B1
C1
C2
C3
C4, C12
C5, C11
C6
C7
C8
C9, C10, C13, C14
C15
C16
C17*
R1
R2
R3, R4
W1
* Need for part will vary from fixture to fixture.
Short RF Bead
22 pF Chip Capacitor, B Case
10 pF Chip Capacitor, B Case
1
μ
F, 50 V Tantalum Capacitor
0.1
μ
F Chip Capacitors, B Case
1K pF Chip Capacitors, B Case
2.7 pF Chip Capacitor, B Case
4.3 pF Chip Capacitor, B Case
10
μ
F, 35 V Tantalum Capacitor
22
μ
F, 35 V Tantalum Capacitors
0.6 – 4.5 Gigatrim Variable Capacitor
2.2 pF Chip Capacitor, B Case
0.3 pF Chip Capacitor, B Case
1 k Chip Resistor
560 k Chip Resistor
12 Chip Resistors
1 turn 14 gauge wire
95F786
100B220CP 500X
100B100CP 500X
T494C105(1)050AS
CDR33BX104AKWS
100B102JP 500X
100B2R7BP 500X
100B4R3JP 500X
T494D106(1)035AS
T494X226(1)035AS
44F3358
100B2R2BP 500X
100B0R3BP 500X
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關(guān)PDF資料 |
PDF描述 |
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| MRF5S19100HR3 | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19100HSR3 | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19150 | RF Power Field Effect Transistors |
| MRF5S19150R3 | RF Power Field Effect Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S19100HR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF5S19100HR3 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19100HR5 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S19100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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