參數(shù)資料
型號(hào)： MRF5S19130HR3
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： Suitable for TDMA, CDMA and multicarrier amplifier applications.
中文描述： 適用于TDMA和CDMA及多載波放大器應(yīng)用。
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 415K
代理商： MRF5S19130HR3
2
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M4 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μ
Adc)
V
GS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1200 mAdc)
V
GS(Q)
—
3.8
—
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
—
0.26
—
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
—
7.5
—
S
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.7
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 26 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±
885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±
2.5 MHz Offset. Peak/Avg. = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain
G
ps
12
13
—
dB
Drain Efficiency
η
D
23
25
—
%
Intermodulation Distortion
IM3
—
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
—
-51
-48
dBc
Input Return Loss
IRL
—
-15
-9
dB
1. Part is internally matched both on input and output.
相關(guān)PDF資料
PDF描述
MRF5S19130SR3 N-Channel Enhancement-Mode Lateral MOSFETs
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MRF5S19130HSR3 Suitable for TDMA, CDMA and multicarrier amplifier applications.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S19130HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF5S19130HR5 功能描述:射頻MOSFET電源晶體管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S19130HSR3 功能描述:射頻MOSFET電源晶體管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S19130HSR5 功能描述:射頻MOSFET電源晶體管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S19130R3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
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