參數(shù)資料
型號(hào)： MRF5S19130R3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-880, CASE 465B-03, 2 PIN
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 415K
代理商： MRF5S19130R3
MRF5S19130HR3 MRF5S19130HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
2000
5
1900
15
60
40
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
Gp
V
DD
= 28 Vdc, P
out
= 26 W (Avg.), I
DQ
= 1200 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
30
5
10
15
20
I
I
I
25
1990
1980
1970
1960
1950
1940
1930
1920
1910
14
35
13
30
12
25
11
20
10
10
9
20
8
30
7
40
6
50
200
10
16
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
Gp
I
DQ
= 1800 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
1500 mA
1200 mA
600 mA
900 mA
15
14
13
12
11
10
100
200
60
25
1
I
DQ
= 1800 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
10
100
30
40
45
50
55
35
1500 mA
1200 mA
600 mA
900 mA
10
60
20
0.1
3rd Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
I
I
V
DD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1200 mA
TwoTone Measurements, Center Frequency = 1960 MHz
1
25
30
35
40
45
50
55
5th Order
7th Order
45
48
60
35
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
Po
36
37
38
39
40
41
42
43
44
59
58
57
56
55
54
53
52
51
50
49
P3dB = 53.11 dBm (205.57 W)
V
DD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 8
μ
sec (on), 1 msec (off)
Center Frequency = 1960 MHz
P1dB = 52.54 dBm (179.61 W)
Actual
Ideal
I
I
η
D
,
E
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S19130SR3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19150 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF5S19150H 制造商:Freescale Semiconductor 功能描述:L BAND, SI, N-CHANNEL, RF POWER, MOSFET
MRF5S19150HR3 功能描述:射頻MOSFET電源晶體管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S19150HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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