參數(shù)資料
型號: MRF5S21045
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場效應晶體管
文件頁數(shù): 2/12頁
文件大?。?/td> 510K
代理商: MRF5S21045
2
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4.
Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
1
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 120
μ
Adc)
V
GS(th)
2
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 500 mAdc)
V
GS(Q)
2
3.8
5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1.2 Adc)
V
DS(on)
0.2
0.35
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1.2 Adc)
g
fs
3.2
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
0.9
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 500 mA, P
out
= 10 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
±
5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @
±
10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
ps
η
D
13.5
14.5
16.5
dB
Drain Efficiency
24
25.5
%
Intermodulation Distortion
IM3
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
-39
-37
dBc
Input Return Loss
IRL
-12
-9
dB
1. Part is internally matched both on input and output.
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MRF5S21045NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs