參數(shù)資料
型號(hào)： MRF5S21100LR3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-780, CASE 465-06, 2 PIN
文件頁數(shù)： 3/12頁
文件大?。?/td> 378K
代理商： MRF5S21100LR3
MRF5S21100HR3 MRF5S21100HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic
R2
V
BIAS
V
SUPPLY
C11
C8
C7
C5
C14
C3
C10
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
Z8
Z16
Z10
Z11
Z12
Z15
Z17
+
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.368
″
x 1.136
″
Microstrip
0.151
″
x 0.393
″
Microstrip
0.280
″
x 0.220
″
Microstrip
0.481
″
x 0.142
″
Microstrip
0.138
″
x 0.080
″
Microstrip
0.344
″
x 0.080
″
Microstrip
0.147
″
x 0.099
″
Microstrip
0.859
″
x 0.080
″
Microstrip
Arlon GX-0300-SS-22, 0.030
″
,
ε
r
= 2.55
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.674
″
x 0.080
″
Microstrip
0.421
″
x 0.080
″
Microstrip
0.140
″
x 0.080
″
Microstrip
1.031
″
x 0.080
″
Microstrip
0.380
″
x 0.643
″
Microstrip
0.080
″
x 0.643
″
Microstrip
0.927
″
x 0.048
″
Microstrip
0.620
″
x 0.048
″
Microstrip
0.079
″
x 1.136
″
Microstrip
DUT
B1
R3
C4
C13
C15
Z13
Z14
C2
C6
W1
R4
C12
+
C9
Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values
Part
B1
Short RF Bead
C1, C2
8.2 pF Chip Capacitors
C3
5.6 pF Chip Capacitor
C4
0.1
μ
F Chip Capacitor
C5, C7
7.5 pF Chip Capacitors
C6
1.2 pF Chip Capacitor
C8
1K pF Chip Capacitor
C9, C10
0.56
μ
F Chip Capacitors
C11
470
μ
F, 63 V Electrolytic Capacitor
C12
100
μ
F, 50 V Electrolytic Capacitor
C13
0.6-4.5 pF Gigatrim Variable Capacitor
C14
2.7 pF Chip Capacitor
C15
0.4-2.5 pF Gigatrim Variable Capacitor
R1
1 k Chip Resistor
R2
560 k Chip Resistor
R3, R4
12 Chip Resistors
Description
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Manufacturer
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相關(guān)PDF資料
PDF描述
MRF5S21100LSR3 The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100HSR3 To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21130HSR3 To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S21100LSR3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130HR3 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21130HR5 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21130HS 制造商:Motorola Inc 功能描述:
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