參數(shù)資料
型號(hào)： MRF6S9045MR1
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/16頁(yè)
文件大小： 530K
代理商： MRF6S9045MR1
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
Typical Single-Carrier N-CDMA Performance @ 880 MHz, V
DD
= 28 Volts,
I
DQ
= 350 mA, P
out
= 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.7 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — -47 dBc @ 30 kHz Bandwidth
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 350 mA,
P
out
= 16 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
GSM
Application
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 350 mA, P
out
= 45 Watts,
Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200
°
C Capable Plastic Package
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +68
Vdc
Gate-Source Voltage
V
GS
- 0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
175
1.0
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6S9045
Rev. 1, 6/2005
Freescale Semiconductor
Technical Data
880 MHz, 10 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF6S9045NR1(MR1)
MRF6S9045NR1
MRF6S9045NBR1
MRF6S9045MR1
MRF6S9045MBR1
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF6S9045NBR1(MBR1)
Freescale Semiconductor, Inc., 2005. All rights reserved.
相關(guān)PDF資料
PDF描述
MRF6S9045NR1 RF Power Field Effect Transistors
MRF6S9045NBR1 RF Power Field Effect Transistors
MRF6S9060MR1 CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
MRF6S9060 RF Power Field Effect Transistors
MRF6S9060MBR1 RF Power Field Effect Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S9045N 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S9045NBR1 功能描述:MOSFET RF N-CH 28V 10W TO-272-2 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9045NR1 功能描述:MOSFET RF N-CH 28V 10W TO-270-2 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9045NR1_08 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9060 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*