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參數(shù)資料
| 型號： | MRF6V2300NBR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 525K |
| 代理商： | MRF6V2300NBR1 |
MRF6V2300NR1 MRF6V2300NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for CW large-signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 900 mA,
P
out
= 300 Watts
Power Gain — 25.5
dB
Drain Efficiency — 68%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
Integrated ESD Protection
Excellent Thermal Stability
Facilitates Manual Gain Control, ALC and Modulation Techniques
200
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +110
Vdc
Gate-Source Voltage
V
GS
-0.5, +10
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Document Number: MRF6V2300N
Rev. 2, 5/2007
Freescale Semiconductor
Technical Data
MRF6V2300NR1
MRF6V2300NBR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6V2300NBR1
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6V2300NR1
10-450 MHz, 300 W, 50 V
LATERAL N-CHANNEL
SINGLE-ENDED
BROADBAND
RF POWER MOSFETs
PARTS ARE SINGLE-ENDED
(Top View)
RF
out
/V
DS
Figure 1. Pin Connections
RF
out
/V
DS
RF
in
/V
GS
RF
in
/V
GS
Note: Exposed backside of the package is
the source terminal for the transistor.
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V2300NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2300NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
| MRF6V2300NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2300NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
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