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參數(shù)資料
| 型號： | MRF6VP11KHR6 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 449K |
| 代理商： | MRF6VP11KHR6 |
MRF6VP11KHR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
Typical Pulsed Performance at 130 MHz: V
DD
= 50 Volts, I
DQ
= 150 mA,
P
out
= 1000 Watts Peak, Pulse Width = 100
μ
sec, Duty Cycle = 20%
Power Gain — 26
dB
Drain Efficiency — 71%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Excellent Thermal Stability
Designed for Push-Pull Operation
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +110
Vdc
Gate-Source Voltage
V
GS
-6.0, +10
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Case Operating Temperature
T
C
150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 1000 W Pulsed, 100
μ
sec Pulse Width, 20% Duty Cycle
R
θ
JC
0.03
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6VP11KH
Rev. 0, 1/2008
Freescale Semiconductor
Technical Data
MRF6VP11KHR6
CASE 375D-05, STYLE 1
NI-1230
10-150 MHz, 1000 W, 50 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
PART IS PUSH-PULL
(Top View)
RF
outA
/V
DSA
3
1
4
2
RF
outB
/V
DSB
RF
inA
/V
GSA
RF
inB
/V
GSB
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2008. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP11KHR6_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6VP121KHR5 | 制造商:Freescale Semiconductor 功能描述: 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230H - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP121KHSR5 | 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHSR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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