參數(shù)資料
型號(hào)： MRF6VP3091NBR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝： ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN
文件頁(yè)數(shù)： 11/18頁(yè)
文件大?。?/td> 749K
代理商： MRF6VP3091NBR1
2
RF Device Data
Freescale Semiconductor
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115)
B (201--400 V)
Charge Device Model (per JESD22--C101)
IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
0.5
μAdc
Drain--Source Breakdown Voltage
(ID =50 mA, VGS =0 Vdc)
V(BR)DSS
115
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
20
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS =10 Vdc, ID = 100 μAdc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS =10 Vdc, ID =0.25 Adc)
VDS(on)
—
0.2
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (2)
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
41
—
pF
Output Capacitance (2)
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
65.4
—
pF
Input Capacitance (2)
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
591
—
pF
Functional Tests (In Freescale Single--Ended Narrowband Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 350 mA, Pout =18 W Avg.,
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.0
22.0
24.0
dB
Drain Efficiency
ηD
27.5
28.5
—
%
Adjacent Channel Power Ratio
ACPR
—
--62.0
--60.0
dBc
Input Return Loss
IRL
—
--14
--9
dB
1. Each side of device measured separately.
2. Part internally input matched.
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MRF6VP3091NBR5 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP3091NR1 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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MRF6VP3450HR5 功能描述:射頻MOSFET電源晶體管 VHV6 450W 860MHZ NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP3450HR5-CUT TAPE 制造商:Freescale 功能描述:MRF6VP3450H Series 470 - 860 MHz 110 V N-Channel RF Power Mosfet
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