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參數(shù)資料
| 型號(hào)： | MRF6VP3091NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN |
| 文件頁數(shù)： | 14/18頁 |
| 文件大?。?/td> | 749K |
| 代理商： | MRF6VP3091NBR1 |
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — CW, SINGLE--ENDED NARROWBAND, 860 MHz
47
56
--6
54
53
4
52
--2
0
2
P3dB = 51.28 dBm (134.3 W)
Actual
Ideal
VDD =50 Vdc,IDQ = 350 mA, f = 860 MHz
50
49
--4
P2dB = 51.06 dBm (127.6 W)
P1dB = 50.7 dBm (117.5 W)
55
51
48
--5
--3
--1
1
3
ηD
Gps
VDD =50 Vdc,IDQ = 350 mA, f = 860 MHz
50
10
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
100
40
Coss
Measured with ±30 mV(rms)ac @ 1 MHz, VGS =0 Vdc
24
1
0
70
100
23
21
19
60
50
40
30
Pout, OUTPUT POWER (WATTS)
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
22
20
17
200
20
Pin, INPUT POWER (dBm)
Figure 6. CW Output Power versus Input Power
P out
,O
UT
PU
T
POWER
(d
Bm)
16
25
0
23
21
Pout, OUTPUT POWER (WATTS)
Figure 7. CW Power Gain versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
20
120
140
Figure 8. CW Power Gain and Drain Efficiency
versus Output Power versus Temperature
Pout, OUTPUT POWER (WATTS)
G
ps
,P
OWER
GAIN
(d
B)
18
25
1
22
24
23
100
200
IDQ = 350 mA, f = 860 MHz
18
40
60
80
100
VDD =40 V
50 V
25_C
TC =--30_C
85_C
Gps
19
21
20
VDD =50 Vdc,IDQ = 350 mA, f = 860 MHz
0
70
10
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
18
10
Crss
10
17
19
22
24
45 V
ηD
TC =--30_C
85_C
25_C
10
20
30
40
50
60
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP3091NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3091NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3091NR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3450HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 450W 860MHZ NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3450HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP3450H Series 470 - 860 MHz 110 V N-Channel RF Power Mosfet |
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