參數(shù)資料
型號(hào)： MRF6VP3450HR5
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN
文件頁(yè)數(shù)： 11/18頁(yè)
文件大?。?/td> 1077K
代理商： MRF6VP3450HR5
2
RF Device Data
Freescale Semiconductor
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 44°C, 450 W CW
Case Temperature 62°C, 450 W Pulsed, 50 μsec Pulse Width, 2.5% Duty Cycle
RθJC
ZθJC
0.27
0.25
0.04
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (3)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
10
μAdc
Drain--Source Breakdown Voltage
(ID =50 mA, VGS =0 Vdc)
V(BR)DSS
110
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
On Characteristics
Gate Threshold Voltage (3)
(VDS =10 Vdc, ID = 320 μAdc)
VGS(th)
1
1.6
2.5
Vdc
Gate Quiescent Voltage (4)
(VDD =50 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2
2.6
3.5
Vdc
Drain--Source On--Voltage (3)
(VGS =10 Vdc, ID =1.58 Adc)
VDS(on)
—
0.25
—
Vdc
Dynamic Characteristics (3,5)
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
0.92
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
54.5
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
373
—
pF
Functional Tests (4) (In Freescale Broadband Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 1400 mA, Pout = 90 W Avg., f = 860 MHz,
DVB--T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.5
22.5
24.5
dB
Drain Efficiency
ηD
26
28
—
%
Adjacent Channel Power Ratio
ACPR
—
--62
--59
dBc
Input Return Loss
IRL
—
--4
--2
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
5. Part internally input matched.
(continued)
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MRF6VP3450HSR6 功能描述:射頻MOSFET電源晶體管 VHV6 450W 860MHZ NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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