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參數(shù)資料
| 型號(hào)： | MRF7P20040HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大?。?/td> | 488K |
| 代理商： | MRF7P20040HSR3 |
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MRF7P20040HR3 MRF7P20040HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1800 to
2200 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =32 Volts,
IDQA = 150 mA, VGSB =1.5 Vdc, Pout = 10 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz
18.2
42.6
7.3
--34.8
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point
50 Watts CW (1)
Features
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 15.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW Operation @ TC =25°C
Derate above 25°C
CW
42.4
0.17
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 78°C, 10 W CW, 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, 2017.5 MHz
Case Temperature 82°C, 40 W CW(1),32Vdc,IDQA = 150 mA, VGSB = 1.5 Vdc, 2017.5 MHz
RθJC
2.11
1.50
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/-
Application Notes -- AN1955.
Document Number: MRF7P20040H
Rev. 2, 12/2010
Freescale Semiconductor
Technical Data
2010--2025 MHz, 10 W AVG., 32 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF7P20040HR3
MRF7P20040HSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF7P20040HSR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
CASE 465M--01, STYLE 1
NI--780--4
MRF7P20040HR3
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
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| MRF7P20040HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2GHZ 40W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S15100HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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