- 您現(xiàn)在的位置：買賣IC網 > PDF目錄98040 > MRF6VP41KHSR6 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF6VP41KHSR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375E-04, NI-1230S, 4 PIN |
| 文件頁數(shù)： | 11/18頁 |
| 文件大小： | 1292K |
| 代理商： | MRF6VP41KHSR6 |
2
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 450 MHz
Case Temperature 48°C, 1000 W CW, 352.2 MHz
RθJC
0.03
0.15
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (3)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
10
μAdc
Drain--Source Breakdown Voltage
(ID = 300 mA, VGS =0 Vdc)
V(BR)DSS
110
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
5
mA
On Characteristics
Gate Threshold Voltage (3)
(VDS =10 Vdc, ID = 1600 μAdc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage (4)
(VDD =50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain--Source On--Voltage (3)
(VGS =10 Vdc, ID =4 Adc)
VDS(on)
—
0.28
—
Vdc
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
3.3
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
147
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
506
—
pF
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 450 MHz,
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
19
20
22
dB
Drain Efficiency
ηD
60
64
—
%
Input Return Loss
IRL
—
--18
--9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
(continued)
相關PDF資料 |
PDF描述 |
|---|---|
| MRF7P20040HR3 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7P20040HSR3 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S15100HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S15100HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S16150HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP41KHSR7 | 功能描述:射頻MOSFET電源晶體管 VHV6 450MHZ1000W NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF750 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF TRANSISTOR |
| MRF752 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF TRANSISTOR |
| MRF7P20040HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2GHZ 40W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7P20040HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復。