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參數(shù)資料
| 型號(hào)： | MRF7P20040HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 488K |
| 代理商： | MRF7P20040HSR3 |
MRF7P20040HR3 MRF7P20040HSR3
15
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF7P20040H and MRF7P20040HS parts will be available for 2 years after release of
MRF7P20040H and MRF7P20040HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF7P20040H and MRF7P20040HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2009
Initial Release of Data Sheet
1
Aug. 2009
Removed IQ Magnitude Clipping from Typical Performance bullet, p. 1 and Functional Test header, p. 2
Electrical Characteristics, DC tests: updated footnote to indicate each side of device measured
separately, p. 2
2
Dec. 2010
Updated frequency in overview paragraph from “2010 to 2025 MHz” to “1800 to 2200 MHz” per expanded
load pull characterization shown in Fig. 14, Carrier Side Load Pull Performance — Maximum P3dB
Tuning and Fig. 15, Carrier Side Load Pull Performance — Maximum Efficiency Tuning, p. 1
Added CW Operation information to Maximum Ratings table, p. 1
In Table 2, Thermal Characteristics, Pout = 10 W CW thermal resistance values changed from
IDQA 2.5/VGSB 2.9to2.11_C/W and Pout = 40 W CW thermal resistance value changed from 2.3 to
1.50_C/W. Thermal values now reflect the use of the combined dissipated power from the carrier
amplifier and peaking amplifier, p. 1
Added Fig. 14, Carrier Side Load Pull Performance — Maximum P3dB Tuning and Fig. 15, Carrier Side
Load Pull Performance — Maximum Efficiency Tuning to show load pull data for expanded frequency range
presented in p. 1 overview paragraph, p. 10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7P20040HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2GHZ 40W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S15100HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S15100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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