參數(shù)資料
型號(hào): MRF7S15100HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁(yè)數(shù): 9/13頁(yè)
文件大?。?/td> 234K
代理商: MRF7S15100HR3
MRF7S15100HR3 MRF7S15100HSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout
CUT
OUT
AREA
R3
MRF7S15100H/HS Rev. 3
B1
R2
C4
C3
R1
L1
C2
C1
L3
L2
C8
C11
C9
C10
C6
C13
C12
C7
C5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S15100HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S15100HR5 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S15100HSR3 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S15100HSR5 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S16150HR3 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray