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參數(shù)資料
| 型號： | MRF7S15100HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 10/13頁 |
| 文件大小： | 234K |
| 代理商： | MRF7S15100HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S15100HR3 MRF7S15100HSR3
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
1400
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 23 Watts Avg.
25
5
10
15
20
19
18
17
41
35
34
33
32
36
37
38
39
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
16
15
14
13
12
11
10
1425
1450
1475
1500
1525
1550
1575
1600
31
40
30
P
ARC
(dB)
1.1
0.7
0.8
0.9
1
1.2
ACPR
(dBc)
Figure 4. CW Power Gain versus Output Power
100
20
1
Pout, OUTPUT POWER (WATTS) CW
VDD = 28 Vdc, f = 1490 MHz
CW Measurements
17
16
10
200
G
ps
,POWER
GAIN
(dB)
18
IDQ = 900 mA
750 mA
Figure 5. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
70
10
20
30
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
40
IM3U
IM3L
IM5U
IM5L
IM7L
IM7U
Figure 6. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
25
0
2
4
OUTPUT
COMPRESSION
A
T
0.01%
PROBABILITY
ON
CCDF
(dB)
15
35
45
65
25
55
50
45
40
35
30
η
D,
DRAIN
EFFICIENCY
(%)
1 dB = 24.14 W
2 dB = 32.65 W
3 dB = 43.29 W
55
ηD
ACPR
PARC
ACPR
(dBc)
45
15
20
25
35
30
40
21
G
ps
,POWER
GAIN
(dB)
20
19
18
17
16
15
Gps
20
IRL
Gps
ACPR
ηD
PARC
VDD = 28 Vdc, Pout = 23 W (Avg.)
IDQ = 600 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
60
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 600 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1490 MHz
VDD = 28 Vdc, IDQ = 600 mA, f = 1490 MHz, SingleCarrier
WCDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
19
600 mA
450 mA
300 mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S15100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S16150HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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