- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98040 > MRF7S19080HSR3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF7S19080HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁(yè)數(shù)： | 10/16頁(yè) |
| 文件大?。?/td> | 639K |
| 代理商： | MRF7S19080HSR3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)當(dāng)前第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
MRF7S19080HR3 MRF7S19080HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, 1930-1990 MHz Bandwidth
Video Bandwidth @ 80 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—
90
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 24 W Avg.
GF
—
0.165
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 80 W CW
Φ
—
1.14
—
°
Average Group Delay @ Pout = 80 W CW, f = 1960 MHz
Delay
—
2.25
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 80 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
22.3
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.009
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.017
—
dBm/°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF7S19100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF7S19100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF7S19120NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF7S19170HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S19170HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S19080HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19100NBR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19100NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19120NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。