參數(shù)資料
型號: MRF7S19170HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN
文件頁數(shù): 2/13頁
文件大小: 408K
代理商: MRF7S19170HR3
10
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
P3dB = 53.97 dBm (249 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW
12
μsec(on), 10% Duty Cycle, f = 1960 MHz
56
54
52
37
39
38
41
40
44
42
Actual
Ideal
P1dB = 53.25 dBm
(211 W)
57
55
51
43
P
out
,OUTPUT
POWER
(dBm)
P6dB = 54.33 dBm (271 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
35
34
33
32
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
2.34 - j9.24
0.79 - j2.94
Figure 17. Pulsed CW Output Power
versus Input Power
36
P3dB = 54.9 dBm (310 W)
Pin, INPUT POWER (dBm)
VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW
12
μsec(on), 10% Duty Cycle, f = 1960 MHz
56
54
52
37
41
40
44
42
Actual
Ideal
P1dB = 54.14 dBm
(259 W)
57
55
43
P
out
,OUTPUT
POWER
(dBm)
P6dB = 55.27 dBm (336 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
62
35
34
33
45
38
39
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
2.34 - j9.24
0.79 - j2.94
Figure 18. Pulsed CW Output Power
versus Input Power
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參數(shù)描述
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