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參數(shù)資料
| 型號： | MRF7S19170HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 408K |
| 代理商： | MRF7S19170HR3 |
12
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2006
Initial Release of Data Sheet
1
Dec. 2008
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
Updated Typical Performance table to provide better definition of characterization attributes, p. 3
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 7
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
Deleted output signal data from Fig. 14, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping,
Single-Carrier Test Signal, p. 8
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| MRF7S19210HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S21080HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S21080HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S19170HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19170HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19170HS | 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述: |
| MRF7S19170HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19170HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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