- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄98040 > MRF7S19210HR3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF7S19210HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁(yè)數(shù)： | 14/16頁(yè) |
| 文件大?。?/td> | 505K |
| 代理商： | MRF7S19210HR3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)當(dāng)前第14頁(yè)第15頁(yè)第16頁(yè)
MRF7S19210HR3 MRF7S19210HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single-Carrier W-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
15
12
24
0
60
50
40
30
20
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
22
20
10
100
300
10
35
ACPR
(dBc)
18
16
14
5
20
25
30
Figure 8. Broadband Frequency Response
5
20
1550
f, FREQUENCY (MHz)
VDD = 28 Vdc
Pout = 9 dBm
IDQ = 1400 mA
10
5
1650
GAIN
(dB)
15
Gain
1750
1850
1950
2050
2150
2250
2350
IRL
10
0
2
4
6
8
IRL
(dB)
0
TC = 30_C
85
_C
Gps
ηD
30
_C
25
_C
VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz
SingleCarrier WCDMA, 3.84 MHz
Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
30
_C
ACPR
25
_C
85
_C
25
_C
85
_C
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
108
107
105
110
130
150
170
190
MTTF
(HOURS)
210
230
106
Figure 9. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 63 W Avg., and ηD = 29%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF7S21080HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S21080HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S21110HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S21110HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S21170HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S19210HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19210HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21080HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21080HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。