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參數(shù)資料
| 型號： | MRF7S21080HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 420K |
| 代理商： | MRF7S21080HSR3 |
MRF7S21080HR3 MRF7S21080HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
70
10
1
100
40
50
10
30
20
7th Order
5th Order
3rd Order
400
VDD = 28 Vdc, IDQ = 800 mA
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
VDD = 28 Vdc, Pout = 70 W (PEP), IDQ = 800 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3L
10
20
40
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
70
30
IM3U
IM5U
IM5L
IM7L
IM7U
50
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
6
Actual
Ideal
0
2
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
CCDF
(dB)
10
40
50
0
70
60
50
30
η
D,
DRAIN
EFFICIENCY
(%)
1 dB = 21.65 W
3 dB = 39.9 W
60
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
70
20
38
42
41
30
40
50
60
ACPR,
UPPER
AND
LOWER
RESUL
TS
(dBc)
43
44
45
46
47
Uncorrected
Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected, with Memory Correction
48
49
200
13
20
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 800 mA
f = 2140 MHz
TC = 30_C
25
_C
85
_C
30
_C
25
_C
85
_C
10
1
18
17
16
15
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
100
14
60
4
5
20
30
40
20
19
60
10
2 dB = 20.9 W
VDD = 28 Vdc, IDQ = 800 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
40
39
VDD = 28 Vdc, IDQ = 800 mA, f = 2140 MHz, SingleCarrier
WCDMA, Input Signal PAR = 7.5 dB
ACPR @
±5 MHz Offset in 3.84 MHz
Integrated Bandwidth
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21080HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21110HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NH780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21110HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NH780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21110HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF7S21110HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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