參數(shù)資料
型號: MRF7S21080HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 420K
代理商: MRF7S21080HSR3
MRF7S21080HR3 MRF7S21080HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 2110-2170 MHz Bandwidth
Video Bandwidth @ 70 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
10
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 22 W Avg.
GF
0.12
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 80 W CW
Φ
22.3
°
Average Group Delay @ Pout = 80 W CW, f = 2140 MHz
Delay
6.21
ns
Part-to-Part Insertion Phase Variation @ Pout = 80 W CW,
f = 2140 MHz, Six Sigma Window
ΔΦ
151.6
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
0.009
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
0.008
dBm/°C
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