參數(shù)資料
型號(hào): MRF7S38075HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CASE 465-06, NI-780, 3 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 435K
代理商: MRF7S38075HR3
2
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 248 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 30 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.3 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
0.77
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
464
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
214
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 900 mA, Pout = 12 W Avg., f = 3400 MHz and f =
3600 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain
Gps
12
14
17
dB
Drain Efficiency
ηD
12
14
24
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
7.5
8.7
dB
Adjacent Channel Power Ratio
ACPR
-49
-46
dBc
Input Return Loss
IRL
-12
-5
dB
1. Part internally matched both on input and output.
(continued)
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