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參數(shù)資料
| 型號(hào)： | MRF7S38075HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465-06, NI-780, 3 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 435K |
| 代理商： | MRF7S38075HR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ Pout = 12 Watts Avg.
20
8
12
16
11.5
15.5
55
16
14
12
49
51
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
15
14.5
14
13.5
13
12.5
3450
3500
3600
10
53
24
IRL
Gps
ηD
VDD = 30 Vdc, Pout = 12 W (Avg.), IDQ = 900 mA, 802.16d
64 QAM 3
/4, 4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
3525
3575
ACPR L
ACPR U
12
47
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout = 23 Watts Avg.
20
8
12
16
11
15
46
24
22
20
40
42
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
14.5
14
13.5
13
12.5
18
44
24
IRL
Gps
VDD = 30 Vdc, Pout = 23 W (Avg.), IDQ = 900 mA, 802.16d
64 QAM 3
/4, 4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
ACPR L
ACPR U
12
38
Figure 5. Two-Tone Power Gain versus
Output Power
9
16
1
IDQ = 1350 mA
Pout, OUTPUT POWER (WATTS) PEP
14
13
11
10
100
G
ps
,POWER
GAIN
(dB)
VDD = 30 Vdc, IDQ = 900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two Tone Measurements, 10 MHz Tone Spacing
12
15
1125 mA
900 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
IDQ = 450 mA
Pout, OUTPUT POWER (WATTS) PEP
10
20
30
40
50
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
100
10
VDD = 30 Vdc, IDQ = 900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two Tone Measurements, 10 MHz Tone Spacing
1350 mA
675 mA
900 mA
3550
3475
3425
3400
3450
3500
3600
3525
3575
3550
3475
3425
3400
11.5
ηD
10
200
675 mA
450 mA
200
1125 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S38075HR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38075HSR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38075HSR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF80 | 制造商:Ferraz Shawmut 功能描述: |
| MRF800 | 制造商:Ferraz Shawmut 功能描述: |
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