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參數(shù)資料
| 型號： | MRF8HP21080HSR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁數(shù)： | 13/14頁 |
| 文件大?。?/td> | 528K |
| 代理商： | MRF8HP21080HSR5 |
8
RF Device Data
Freescale Semiconductor
MRF8HP21080HR3 MRF8HP21080HSR3
VDD =28 Vdc,VGSB = 1.1 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Output Power
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
4.73 -- j9.34
3.70 -- j6.50
48.6
72
60.2
49.3
85
61.1
2140
6.50 -- j11.3
3.39 -- j6.80
48.7
74
59.7
49.4
87
59.5
2170
7.08 -- j13.3
3.30 -- j7.10
48.6
72
59.1
49.4
87
59.0
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 12. Peaking Side Load Pull Performance — Maximum P1dB Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28 Vdc,VGSB = 1.1 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Drain Efficiency
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
4.73 -- j9.34
8.22 -- j9.10
46.7
47
70.6
47.5
56
70.5
2140
6.50 --j11.3
9.00 -- j8.20
46.6
46
71.0
47.4
55
70.4
2170
7.08 -- j13.3
9.10 -- j7.55
46.4
44
69.6
47.9
62
69.0
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 13. Peaking Side Load Pull Performance — Maximum Efficiency Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
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| MRF8HP21130HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8HP21130HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRF8HP21130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P18265HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 260W DOHERT NI1230-8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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