參數(shù)資料
型號： MRF8HP21130HSR5
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
文件頁數(shù)： 12/14頁
文件大?。?/td> 562K
代理商： MRF8HP21130HSR5
MRF8HP21130HR3 MRF8HP21130HSR3
7
RF Device Data
Freescale Semiconductor
VDD =28 Vdc,IDQB = 360 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Output Power
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
6.20 -- j10.7
3.40 -- j6.70
48.4
69
55.3
49.2
83
56.1
2140
7.80 -- j11.5
3.40 -- j6.80
48.4
69
55.5
49.2
83
55.3
2170
9.20 -- j12.2
3.00 -- j7.24
48.4
69
52.5
49.2
83
53.3
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28 Vdc,IDQB = 360 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Drain Efficiency
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
6.20 -- j10.7
7.60 -- j6.30
46.8
48
63.5
48.0
63
64.1
2140
7.80 -- j11.5
7.71 -- j5.50
46.6
46
63.5
47.8
60
63.9
2170
9.20 -- j12.2
6.40 -- j5.60
47.0
50
62.3
47.8
60
62.5
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
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