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參數(shù)資料
| 型號(hào)： | MRF8P20160HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465H-02, 4 PIN |
| 文件頁(yè)數(shù)： | 11/17頁(yè) |
| 文件大?。?/td> | 807K |
| 代理商： | MRF8P20160HSR3 |
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MRF8P20160HR3 MRF8P20160HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA, VGSB =1.6 Vdc,
1880--1920 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
107
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
160
—
W
IMD Symmetry @ 40 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
13
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =37 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
—
0.01
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
P1dB
—
0.009
—
dB/°C
Typical Broadband Performance — 2025 MHz (1) (In Freescale 2025 Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA,
VGSB =1.6 Vdc, Pout = 37 W Avg., f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz
15.3
44.0
6.8
--30.0
1. Measurement made with device in a Symmetrical Doherty configuration.
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| MRF8P20160HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 160W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20161HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20161HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20165WHR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20165WHR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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