參數(shù)資料
型號(hào): MRF9100SR3
廠商: MOTOROLA INC
元件分類(lèi): 功率晶體管
英文描述: 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-780S, CASE 465A-06, 2 PIN
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 395K
代理商: MRF9100SR3
1
MRF9100 MRF9100R3 MRF9100SR3
Motorola, Inc. 2002
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 26 volt base station equipment.
On–Die Integrated Input Match
Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
Output Power, P1dB — 110 Watts (Typ)
Power Gain @ P1dB — 16.5 dB (Typ)
Efficiency @ P1dB — 53% (Typ)
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,
100 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
+15, –0.5
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
175
1.0
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +200
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.0
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9100/D
SEMICONDUCTOR TECHNICAL DATA
GSM/EDGE 900 MHz, 110 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
(NI–780)
(MRF9100)
CASE 465A–06, STYLE 1
(NI–780S)
(MRF9100SR3)
REV 1
相關(guān)PDF資料
PDF描述
MRF9482T1 RF MOSFETS(RF MOS場(chǎng)效應(yīng)管)
MRF949T1 Low Noise Transistor(低噪聲晶體管)
MRF9511LT1 CAP CERAMIC 5.1PF 25V C0G 0201
MRF957T1 NPN Silicon Low Noise, High-Frequency Transistors
MRF9820T1 SURFACE MOUNT LOW NOISE ENHANCEMENT MODE GaAs CASCODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9120 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF9120LR3 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9120LR5 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9120R3 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF9130L 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF Power Field Effect Transistors