參數資料
型號: MRF9482T1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF MOSFETS(RF MOS場效應管)
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: PLASTIC, CASE 449-02, 4 PIN
文件頁數: 1/2頁
文件大?。?/td> 55K
代理商: MRF9482T1
HIGH FREQUENCY
POWER TRANSISTOR
LDMOS FET
36 dBm, 900 MHz
PLASTIC PACKAGE
CASE 449
(PLD–1, Tape & Reel Only)
4
1
Order this document BY MRF9482T1PP/D
Pin 1. Drain
2. Gate
3. Source
4. Source
2
3
Device
Marking
Package
ORDERING INFORMATION
MRF9482T1
9482
PLD–1
Tape & Reel*
*1,000 Units per 12 mm, 7 inch reel.
SEMICONDUCTOR
TECHNICAL DATA
1
Designed for use in low voltage, moderate power amplifiers such as
portable analog and digital cellular radios and PC RF modems.
Performance Specifications at 900 MHz, 4.8 V
Output Power = 36 dBm Typ
Power Gain = 10 dB Typ
Efficiency = 65% Typ
Guaranteed Ruggedness at Load VSWR = 10:1
New Plastic Surface Mount Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGO
VGS
ID
PD
20
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
20
Vdc
±
7.0
Vdc
Drain Current – Continuous
1.1
Adc
Total Device Dissipation @ TC = 50
°
C
Derate above 50
°
C
12.5
125
W
mW/
°
C
Storage Temperature Range
Tstg
TJ
–65 to 150
°
C
Operating Junction Temperature
150
°
C
NOTE:
ESD data available upon request.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction–to–Case
R
θ
JC
8.0
°
C/W
This document contains information on a product under development. Motorola reserves the
right to change or discontinue this product without notice.
Motorola, Inc. 1998
Rev 0
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相關代理商/技術參數
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