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參數資料
| 型號： | MRF9822T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT |
| 中文描述： | UHF BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 68K |
| 代理商： | MRF9822T1 |
1
MRF9822T1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Small Signal Line
Pseudomorphic High Electron Mobility Transistor
Designed for use in low voltage, moderate power amplifiers such as portable
analog and digital cellular radios and PC RF modems.
Performance Specifications at 3.5 V, 850 MHz:
Output Power = 31 dBm Min
Power Gain = 11 dB Typ
Efficiency = 70% Min
Guaranteed Ruggedness at Load VSWR = 20:1
New Plastic Surface Mount Package
Available in Tape and Reel Packaging Options:
T1 suffix = 1,000 Units per Reel
Device Marking = 9822
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDGO
VGS
ID
PD
12
Vdc
Gate–Source Voltage
– 6
Vdc
Drain Current – Continuous
3
Adc
Total Device Dissipation @ TC = 50
°
C
Derate above 50
°
C
10
100
W
mW/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Temperature Range
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
10
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Gate Breakdown Voltage
(ID = 1.5 mA)
BVGDO
12
–
–
Vdc
Off–state Leakage Current
(VDS = 5.5 V, VGS = –2. 6 V)
IDS(off)
–
–
3
mA
Gate–Source Leakage Current
(VGS = –2. 6 V)
IGSS
–
–
10
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9822T1/D
SEMICONDUCTOR TECHNICAL DATA
31 dBm, 850 MHz
HIGH FREQUENCY
POWER TRANSISTOR
GaAs PHEMT
CASE 449–02, STYLE 1
(PLD–1)
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